IRF7705TR
Виробник:
на замовлення 42500 шт:
термін постачання 14-28 дні (днів)
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Технічний опис IRF7705TR
Description: MOSFET P-CH 30V 8A 8TSSOP, Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.5W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF7705TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF7705TR | Infineon Technologies |
Description: MOSFET P-CH 30V 8A 8TSSOP Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| IRF7705TR |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 8A 8TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.