на замовлення 8 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.49 грн |
| 10+ | 161.95 грн |
| 100+ | 112.26 грн |
| 250+ | 107.61 грн |
| 500+ | 93 грн |
| 800+ | 82.37 грн |
| 2400+ | 79.71 грн |
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Технічний опис IRF840STRRPBF Vishay Semiconductors
Description: MOSFET N-CH 500V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Інші пропозиції IRF840STRRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
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| IRF840STRRPBF |
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на замовлення 2080 шт: термін постачання 14-28 дні (днів) |
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IRF840STRRPBF | Виробник : Vishay |
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IRF840STRRPBF | Виробник : Vishay |
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| IRF840STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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IRF840STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 500V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
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IRF840STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 500V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
товар відсутній |
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| IRF840STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |