Технічний опис IRFB17N50L IR
Description: MOSFET N-CH 500V 16A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 220W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IRFB17N50L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFB17N50L | Vishay Siliconix |
 Description: MOSFET N-CH 500V 16A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
IRFB17N50L | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFB |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFB17N50L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 500V 16A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRFB17N50L |
|
Виробник: Vishay / Siliconix
MOSFETs RECOMMENDED ALT IRFB
MOSFETs RECOMMENDED ALT IRFB
товару немає в наявності
В кошику
од. на суму грн.