Технічний опис IRFBA22N50APBF Vishay
Description: MOSFET N-CH 500V 24A SUPER-220, Packaging: Tube, Package / Case: Super-220™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 13.8A, 10V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SUPER-220™ (TO-273AA), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V.
Інші пропозиції IRFBA22N50APBF
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IRFBA22N50APBF | Виробник : Vishay Siliconix |
![]() Packaging: Tube Package / Case: Super-220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13.8A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
товару немає в наявності |
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IRFBA22N50APBF | Виробник : Vishay / Siliconix |
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товару немає в наявності |