на замовлення 522 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.06 грн |
| 10+ | 101.34 грн |
| 100+ | 70.1 грн |
| 250+ | 64.56 грн |
| 500+ | 58.42 грн |
| 1000+ | 50 грн |
| 2000+ | 49.4 грн |
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Технічний опис IRFBC30ALPBF Vishay Semiconductors
Description: MOSFET N-CH 600V 3.6A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Інші пропозиції IRFBC30ALPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IRFBC30ALPBF | Виробник : Vishay |
 Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-262 |
товар відсутній |
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| IRFBC30ALPBF | Виробник : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.6A; Idm: 14A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 14A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFBC30ALPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 3.6A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
товар відсутній |
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| IRFBC30ALPBF | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.6A; Idm: 14A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 14A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |