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|---|---|
| 2+ | 210.18 грн |
| 10+ | 134.91 грн |
| 100+ | 85.89 грн |
| 500+ | 65.43 грн |
| 800+ | 59.91 грн |
| 2400+ | 58.45 грн |
| 4800+ | 58.38 грн |
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Технічний опис IRFBF20STRRPBF Vishay Semiconductors
Description: MOSFET N-CH 900V 1.7A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IRFBF20STRRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFBF20STRRPBF | Vishay Siliconix |
 Description: MOSFET N-CH 900V 1.7A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| IRFBF20STRRPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 900V 1.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.