на замовлення 800 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 156.16 грн |
| 10+ | 127.89 грн |
| 100+ | 88.57 грн |
| 250+ | 81.91 грн |
| 500+ | 69.92 грн |
| 800+ | 65.26 грн |
| 2400+ | 63.26 грн |
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Технічний опис IRFBF20STRRPBF Vishay Semiconductors
Description: MOSFET N-CH 900V 1.7A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Power Dissipation (Max): 3.1W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Інші пропозиції IRFBF20STRRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IRFBF20STRRPBF | Виробник : Vishay |
 Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IRFBF20STRRPBF | Виробник : Vishay |
Trans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| IRFBF20STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.7A Pulsed drain current: 6.8A Power dissipation: 54W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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IRFBF20STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 900V 1.7A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товар відсутній |
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| IRFBF20STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.7A Pulsed drain current: 6.8A Power dissipation: 54W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |