| Кількість | Ціна |
|---|---|
| 3+ | 138.49 грн |
| 10+ | 113.23 грн |
| 100+ | 78.91 грн |
| 500+ | 69.83 грн |
| 1000+ | 63.40 грн |
| 2500+ | 52.30 грн |
| 5000+ | 50.62 грн |
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Технічний опис IRFD420PBF Vishay Semiconductors
Description: MOSFET N-CH 500V 370MA 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V, Current - Continuous Drain (Id) @ 25°C: 370mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Bulk.
Інші пропозиції IRFD420PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| IRFD420PBF |
 MOSFET N-CH 500V 370MA 4-DIP Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
IRFD420PBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 370MA 4DIP Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| IRFD420PBF |
|
MOSFET N-CH 500V 370MA 4-DIP Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRFD420PBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 370MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: MOSFET N-CH 500V 370MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.