Технічний опис IRFD9010 IR
Description: MOSFET P-CH 50V 1.1A 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Інші пропозиції IRFD9010
| Фото | Назва | Виробник | Інформація |
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IRFD9010 | Виробник : Vishay Siliconix |
 Description: MOSFET P-CH 50V 1.1A 4DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
товару немає в наявності |
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IRFD9010 | Виробник : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFD |
товару немає в наявності |