IRFD9020PBF Vishay Siliconix

Description: MOSFET P-CH 60V 1.6A 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 1µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.