Технічний опис IRFD9123PBF Vishay
Description: MOSFET P-CH 100V 1A 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Інші пропозиції IRFD9123PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFD9123PBF | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 100V 1A 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
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