Технічний опис IRFD9210PBF Vishay
Description: MOSFET P-CH 200V 400MA 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Інші пропозиції IRFD9210PBF за ціною від 26.19 грн до 162.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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IRFD9210PBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -0.25A Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of channel: enhancement |
на замовлення 1695 шт: термін постачання 14-30 дні (днів) |
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IRFD9210PBF | Vishay Siliconix |
Description: MOSFET P-CH 200V 400MA 4DIP Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
на замовлення 891 шт: термін постачання 21-31 дні (днів) |
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| IRFD9210PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.25A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 8.9nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.25A
Power dissipation: 1W
Case: DIP4
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 8.9nC
Kind of channel: enhancement
на замовлення 1695 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.51 грн |
| 7+ | 67.28 грн |
| 10+ | 58.32 грн |
| 25+ | 44.94 грн |
| 100+ | 30.12 грн |
| 200+ | 26.19 грн |
| IRFD9210PBF |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 400MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET P-CH 200V 400MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.67 грн |
| 10+ | 100.84 грн |
| 100+ | 68.87 грн |
| 500+ | 51.78 грн |