| Кількість | Ціна |
|---|---|
| 2+ | 165.38 грн |
| 10+ | 130.09 грн |
| 100+ | 89.38 грн |
| 500+ | 72.62 грн |
| 1000+ | 62.98 грн |
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Технічний опис IRFDC20PBF Vishay / Siliconix
Description: MOSFET N-CH 600V 320MA 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.
Інші пропозиції IRFDC20PBF за ціною від 55.03 грн до 202.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IRFDC20PBF | Vishay Siliconix |
 Description: MOSFET N-CH 600V 320MA 4DIPInput Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 5395 шт: термін постачання 21-31 дні (днів) |
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| IRFDC20PBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 320MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: MOSFET N-CH 600V 320MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 5395 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 202.67 грн |
| 10+ | 126.78 грн |
| 100+ | 87.56 грн |
| 500+ | 66.46 грн |
| 1000+ | 61.42 грн |
| 2000+ | 57.17 грн |
| 5000+ | 55.03 грн |