IRFHM792TR2PBF
Виробник:
IRFHM792TR2PBF Транзисторы HEXFET
на замовлення 11 шт:
термін постачання 4 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис IRFHM792TR2PBF
Description: MOSFET 2N-CH 100V 2.3A 8PQFN, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Drain to Source Voltage (Vdss): 100V, Power - Max: 2.3W, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Cut Tape (CT), Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 10µA, Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V.
Інші пропозиції IRFHM792TR2PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFHM792TR2PBF | Infineon Technologies |
Description: MOSFET 2N-CH 100V 2.3A 8PQFN Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.3A Drain to Source Voltage (Vdss): 100V Power - Max: 2.3W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-PQFN-Dual (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFHM792TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 2.3A 8PQFN
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Description: MOSFET 2N-CH 100V 2.3A 8PQFN
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
товару немає в наявності
В кошику
од. на суму грн.