Технічний опис IRFIB8N50K IR
Description: MOSFET N-CH 500V 6.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V.
Інші пропозиції IRFIB8N50K
| Фото | Назва | Виробник | Інформація |
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IRFIB8N50K | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 500V 6.7A TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V |
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