IRFIBC30GPBF

Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement

Виробник: Vishay
Trans MOSFET N-CH 600V 2.5A 3-Pin(3+Tab) TO-220FP

Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 2.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs MOSFET N-CHANNEL 600V