Технічний опис IRFP27N60K IR
Description: MOSFET N-CH 600V 27A TO247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V.
Інші пропозиції IRFP27N60K
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| IRFP27N60K | HEXFET TO247 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
IRFP27N60K | Vishay Siliconix |
Description: MOSFET N-CH 600V 27A TO247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFP27N60K | Vishay / Siliconix | MOSFETs RECOMMENDED ALT IRFP |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFP27N60K |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 27A TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Description: MOSFET N-CH 600V 27A TO247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
товару немає в наявності
В кошику
од. на суму грн.
| IRFP27N60K |
Виробник: Vishay / Siliconix
MOSFETs RECOMMENDED ALT IRFP
MOSFETs RECOMMENDED ALT IRFP
товару немає в наявності
В кошику
од. на суму грн.