на замовлення 8941 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.67 грн |
| 10+ | 57.74 грн |
| 100+ | 34.25 грн |
| 500+ | 29.24 грн |
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Технічний опис IRFR110TRLPBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Інші пропозиції IRFR110TRLPBF-BE3 за ціною від 35.3 грн до 88.83 грн
| Фото | Назва | Виробник | Інформація |
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IRFR110TRLPBF-BE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 100V 4.3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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IRFR110TRLPBF-BE3 | Виробник : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK |
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| IRFR110TRLPBF-BE3 | Виробник : Vishay |
Power MOSFET |
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| IRFR110TRLPBF-BE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: 100V Drain current: 4.3A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 3000 шт |
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IRFR110TRLPBF-BE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
товар відсутній |
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| IRFR110TRLPBF-BE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: 100V Drain current: 4.3A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape |
товар відсутній |