IRFR1N60APBF-BE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 168.63 грн |
| 10+ | 75.97 грн |
| 100+ | 50.35 грн |
| 500+ | 44.48 грн |
| 1000+ | 41.41 грн |
| 3000+ | 40.50 грн |
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Технічний опис IRFR1N60APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Інші пропозиції IRFR1N60APBF-BE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFR1N60APBF-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 600V 1.4A DPAKInput Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR1N60APBF-BE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.