IRFR210TRPBF Vishay Semiconductors

Description: MOSFET N-CH 200V 2.6A DPAK, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Drain to Source Voltage (Vdss): 200 V, Vgs(th) (Max) @ Id: 4V @ 250µA, FET Type: N-Channel, Packaging: Tape & Reel (TR).