на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 62.54 грн |
10+ | 54.25 грн |
100+ | 33 грн |
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Технічний опис IRFR220TRRPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 4.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Інші пропозиції IRFR220TRRPBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFR220TRRPBF | Виробник : Vishay | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R |
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IRFR220TRRPBF | Виробник : Vishay | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R |
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IRFR220TRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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IRFR220TRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
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IRFR220TRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
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IRFR220TRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |