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Технічний опис IRFR420TRRPBF Vishay
Description: MOSFET N-CH 500V 2.4A DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V.
Інші пропозиції IRFR420TRRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFR420TRRPBF | Vishay Siliconix |
 Description: MOSFET N-CH 500V 2.4A DPAKDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
IRFR420TRRPBF | Vishay / Siliconix |
MOSFETs N-Chan 500V 2.4 Amp |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| IRFR420TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| IRFR420TRRPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Description: MOSFET N-CH 500V 2.4A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFR420TRRPBF |
|
Виробник: Vishay / Siliconix
MOSFETs N-Chan 500V 2.4 Amp
MOSFETs N-Chan 500V 2.4 Amp
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| IRFR420TRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.