IRFR4510PBF
Виробник:
IRFR4510PBF Транзисторы
на замовлення 103 шт:
термін постачання 4 дні (днів)
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Технічний опис IRFR4510PBF
Description: MOSFET N CH 100V 56A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 4V @ 100µA, Power Dissipation (Max): 143W (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Інші пропозиції IRFR4510PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRFR4510PBF | International Rectifier |
Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRFR4510PBF | Infineon Technologies |
Description: MOSFET N CH 100V 56A DPAK Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR4510PBF |
|
Виробник: International Rectifier
Транзистори
Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRFR4510PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N CH 100V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.