Технічний опис IRFR9010TRLPBF Vishay
Description: MOSFET P-CH 50V 5.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Інші пропозиції IRFR9010TRLPBF
| Фото | Назва | Виробник | Інформація |
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IRFR9010TRLPBF | Виробник : Vishay |
 Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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| IRFR9010TRLPBF | Виробник : VISHAY |
IRFR9010TRLPBF SMD P channel transistors |
товару немає в наявності |
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IRFR9010TRLPBF | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 50V 5.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
товару немає в наявності |
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IRFR9010TRLPBF | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 50V 5.3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
товару немає в наявності |
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IRFR9010TRLPBF | Виробник : Vishay Semiconductors |
MOSFET 60V P-CH HEXFET MOSFET D |
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