| Кількість | Ціна |
|---|---|
| 2+ | 199.59 грн |
| 10+ | 126.88 грн |
| 100+ | 75.41 грн |
| 500+ | 61.87 грн |
| 1000+ | 57.12 грн |
| 3000+ | 55.09 грн |
| 6000+ | 54.05 грн |
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Технічний опис IRFR9020TRLPBF Vishay Semiconductors
Description: MOSFET P-CH 50V 9.9A DPAK, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc).
Інші пропозиції IRFR9020TRLPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFR9020TRLPBF | Vishay Siliconix |
 Description: MOSFET P-CH 50V 9.9A DPAKFET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| IRFR9020TRLPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A DPAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Description: MOSFET P-CH 50V 9.9A DPAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.