Технічний опис IRFU120PBF
- MOSFET, N, 100V, 7.7A, I-PAK
- Transistor Polarity:N
- Max Current Id:7.7A
- Max Voltage Vds:100V
- On State Resistance:0.27ohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:20V
- Power Dissipation:0W
- Operating Temperature Range:-55`C to +150`C
- Transistor Case Style:I-PAK
- Alternate Case Style:I-PAK
- Case Style:I-PAK
- Cont Current Id:7.7A
- Junction to Case Thermal Resistance A:0`C/W
- On State resistance @ Vgs = 10V:270ohm
- Power Dissipation Pd:42W
- Pulse Current Idm:31A
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Turn Off Time, t Off:14ns
- Turn On Time, t On:27ns
- Typ Voltage Vds:100V
- Typ Voltage Vgs th:4V
- Voltage Vgs Rds on Measurement:10V
Інші пропозиції IRFU120PBF за ціною від 29.11 грн до 141.62 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFU120PBF | Vishay Semiconductors |
  MOSFETs TO251 100V 7.7A N-CH MOSFET |
на замовлення 4324 шт: термін постачання 21-30 дні (днів) |
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IRFU120PBF | Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A TO251AA Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
на замовлення 3680 шт: термін постачання 21-31 дні (днів) |
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| IRFU120PBF |
|
Виробник: Vishay Semiconductors
MOSFETs TO251 100V 7.7A N-CH MOSFET
MOSFETs TO251 100V 7.7A N-CH MOSFET
на замовлення 4324 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 79.01 грн |
| 10+ | 37.20 грн |
| 100+ | 31.37 грн |
| 500+ | 31.29 грн |
| 1000+ | 29.54 грн |
| 3000+ | 29.47 грн |
| 6000+ | 29.11 грн |
| IRFU120PBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A TO251AA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Description: MOSFET N-CH 100V 7.7A TO251AA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
на замовлення 3680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.62 грн |
| 75+ | 61.55 грн |
| 150+ | 55.34 грн |
| 525+ | 43.65 грн |
| 1050+ | 40.06 грн |
| 2025+ | 37.18 грн |