IRFU9010PBF Vishay Siliconix

Description: MOSFET P-CH 50V 5.3A TO251AA, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.