IRFU9020PBF Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET P-CH 50V 9.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 8336 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 119.28 грн |
75+ | 92.34 грн |
150+ | 75.98 грн |
525+ | 60.33 грн |
1050+ | 51.19 грн |
2025+ | 48.63 грн |
5025+ | 46.04 грн |
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Технічний опис IRFU9020PBF Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Інші пропозиції IRFU9020PBF за ціною від 48.96 грн до 130.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IRFU9020PBF | Виробник : Vishay Semiconductors | MOSFET P-Chan 60V 8.8 Amp |
на замовлення 2778 шт: термін постачання 21-30 дні (днів) |
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IRFU9020PBF | Виробник : Vishay | Trans MOSFET P-CH 50V 9.9A 3-Pin(3+Tab) IPAK |
товар відсутній |
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IRFU9020PBF | Виробник : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IRFU9020PBF | Виробник : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |