| Кількість | Ціна |
|---|---|
| 3+ | 127.90 грн |
| 10+ | 61.75 грн |
| 100+ | 48.11 грн |
| 500+ | 40.92 грн |
| 1000+ | 39.66 грн |
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Технічний опис IRFU9110PBF Vishay Semiconductors
Description: MOSFET P-CH 100V 3.1A TO251AA, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції IRFU9110PBF за ціною від 45.58 грн до 133.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IRFU9110PBF | Vishay Siliconix |
 Description: MOSFET P-CH 100V 3.1A TO251AAInput Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
на замовлення 1877 шт: термін постачання 21-31 дні (днів) |
|
| IRFU9110PBF |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 100V 3.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 133.55 грн |
| 75+ | 67.85 грн |
| 150+ | 58.24 грн |
| 525+ | 48.79 грн |
| 1050+ | 45.58 грн |