IRL3302L Vishay Siliconix

Description: MOSFET N-CH 20V 39A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Supplier Device Package: TO-262-3, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 57W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.