Технічний опис IRL530 IR
Description: MOSFET N-CH 100V 15A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V.
Інші пропозиції IRL530
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRL530 | Виробник : Vishay |
 Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
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IRL530 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
товар відсутній |
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IRL530 | Виробник : Vishay / Siliconix |
MOSFET RECOMMENDED ALT IRL530PBF |
товар відсутній |