| Кількість | Ціна |
|---|---|
| 3+ | 154.25 грн |
| 10+ | 82.49 грн |
| 100+ | 65.33 грн |
| 500+ | 53.66 грн |
| 1000+ | 49.79 грн |
| 2000+ | 49.30 грн |
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Технічний опис IRL620PBF Vishay Semiconductors
Description: MOSFET N-CH 200V 5.2A TO220AB, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Інші пропозиції IRL620PBF за ціною від 60.86 грн до 190.67 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRL620PBF | Vishay Siliconix |
 Description: MOSFET N-CH 200V 5.2A TO220ABGate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
на замовлення 947 шт: термін постачання 21-31 дні (днів) |
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| IRL620PBF | VISHAY |
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на замовлення 20350 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| IRL620PBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 200V 5.2A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 190.67 грн |
| 50+ | 89.88 грн |
| 100+ | 80.80 грн |
| 500+ | 60.86 грн |