IRL620STRLPBF Vishay Semiconductors
на замовлення 695 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 169.81 грн |
| 10+ | 139.34 грн |
| 100+ | 96.02 грн |
| 250+ | 89.16 грн |
| 500+ | 83.83 грн |
| 800+ | 65.92 грн |
| 2400+ | 65.54 грн |
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Технічний опис IRL620STRLPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 5.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Інші пропозиції IRL620STRLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRL620STRLPBF | Виробник : Vishay |
 Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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IRL620STRLPBF | Виробник : Vishay |
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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IRL620STRLPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
товару немає в наявності |
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IRL620STRLPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
товару немає в наявності |
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| IRL620STRLPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 21A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 1Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |