на замовлення 800 шт:
термін постачання 147-156 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 183.04 грн |
10+ | 150.48 грн |
100+ | 104.15 грн |
250+ | 96.14 грн |
500+ | 82.78 грн |
800+ | 75.44 грн |
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Технічний опис IRL630STRRPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Інші пропозиції IRL630STRRPBF
Фото | Назва | Виробник | Інформація |
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IRL630STRRPBF | Виробник : Vishay | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
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IRL630STRRPBF | Виробник : Vishay | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
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IRL630STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 74W On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 9A кількість в упаковці: 800 шт |
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IRL630STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRL630STRRPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRL630STRRPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 74W On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 9A |
товар відсутній |