| Кількість | Ціна |
|---|---|
| 3+ | 137.32 грн |
| 10+ | 109.42 грн |
| 100+ | 78.24 грн |
| 500+ | 73.30 грн |
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Технічний опис IRLIZ34GPBF Vishay Semiconductors
Description: MOSFET N-CH 60V 20A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Інші пропозиції IRLIZ34GPBF за ціною від 78.95 грн до 239.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLIZ34GPBF | Vishay Siliconix |
 Description: MOSFET N-CH 60V 20A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 982 шт: термін постачання 21-31 дні (днів) |
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| IRLIZ34GPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 60V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.46 грн |
| 50+ | 107.36 грн |
| 100+ | 94.67 грн |
| 500+ | 78.95 грн |