IRLR024TRLPBF Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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Технічний опис IRLR024TRLPBF Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.
Інші пропозиції IRLR024TRLPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRLR024TRLPBF | Vishay / Siliconix |
MOSFETs N-Chan 60V 14 Amp |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLR024TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 56A On-state resistance: 0.14Ω Gate charge: 18nC Gate-source voltage: ±10V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| IRLR024TRLPBF |
|
Виробник: Vishay / Siliconix
MOSFETs N-Chan 60V 14 Amp
MOSFETs N-Chan 60V 14 Amp
товару немає в наявності
В кошику
од. на суму грн.
| IRLR024TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.