на замовлення 6468 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 114.15 грн |
| 10+ | 92.22 грн |
| 100+ | 60.84 грн |
| 500+ | 50.69 грн |
| 1000+ | 42.96 грн |
| 3000+ | 41.64 грн |
| 9000+ | 40.61 грн |
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Технічний опис IRLR120TRLPBF Vishay Semiconductors
Description: MOSFET N-CH 100V 7.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Інші пропозиції IRLR120TRLPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRLR120TRLPBF | Виробник : Vishay |
 Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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IRLR120TRLPBF | Виробник : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
|
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IRLR120TRLPBF | Виробник : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
|
| IRLR120TRLPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC On-state resistance: 0.38Ω Gate-source voltage: ±10V Pulsed drain current: 31A кількість в упаковці: 3000 шт |
товару немає в наявності |
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IRLR120TRLPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
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IRLR120TRLPBF | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
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| IRLR120TRLPBF | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC On-state resistance: 0.38Ω Gate-source voltage: ±10V Pulsed drain current: 31A |
товару немає в наявності |