IRLZ14PBF

Виробник: Vishay
Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB

Виробник: VISHAY
Description: VISHAY - IRLZ14PBF - Leistungs-MOSFET, n-Kanal, 60 V, 10 A, 0.2 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 43W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.2ohm
SVHC: Lead (21-Jan-2025)

Виробник: Vishay
Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs TO220 N-CH 60V 10A

Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; Idm: 40A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Pulsed drain current: 40A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhancement