IRLZ14STRLPBF Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.66 грн |
| 10+ | 94.10 грн |
Відгуки про товар
Написати відгук
Технічний опис IRLZ14STRLPBF Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Інші пропозиції IRLZ14STRLPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRLZ14STRLPBF | Vishay |
Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
|
|
IRLZ14STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 60V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
 |
IRLZ14STRLPBF | Vishay / BC Components |
MOSFETs TO263 N-CH 60V 10A |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLZ14STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; Idm: 40A; 43W Case: D2PAK; TO263 Kind of package: reel; tape Pulsed drain current: 40A Power dissipation: 43W Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 8.4nC On-state resistance: 0.28Ω Drain current: 7.2A Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRLZ14STRLPBF |
|
Виробник: Vishay
Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK T/R
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRLZ14STRLPBF |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRLZ14STRLPBF |
|
Виробник: Vishay / BC Components
MOSFETs TO263 N-CH 60V 10A
MOSFETs TO263 N-CH 60V 10A
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ14STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; Idm: 40A; 43W
Case: D2PAK; TO263
Kind of package: reel; tape
Pulsed drain current: 40A
Power dissipation: 43W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Drain current: 7.2A
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; Idm: 40A; 43W
Case: D2PAK; TO263
Kind of package: reel; tape
Pulsed drain current: 40A
Power dissipation: 43W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Drain current: 7.2A
Gate-source voltage: ±10V
товару немає в наявності
В кошику
од. на суму грн.