Технічний опис IXFB52N90P Littelfuse
Description: MOSFET N-CH 900V 52A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.
Інші пропозиції IXFB52N90P
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IXFB52N90P | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFB52N90P | Виробник : IXYS |
Description: MOSFET N-CH 900V 52A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товару немає в наявності |
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IXFB52N90P | Виробник : IXYS |
MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds |
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IXFB52N90P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω |
товару немає в наявності |