Технічний опис IXFH14N100Q2 Littelfuse
Description: MOSFET N-CH 1000V 14A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Інші пропозиції IXFH14N100Q2
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IXFH14N100Q2 | Виробник : IXYS |
 Description: MOSFET N-CH 1000V 14A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
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IXFH14N100Q2 | Виробник : IXYS |
MOSFET 14 Amps 1000V 0.90 Rds |
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