Технічний опис IXFK120N20
Description: MOSFET N-CH 200V 120A TO-264AA, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 560W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції IXFK120N20
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFK120N20 | Виробник : IXYS |
Description: MOSFET N-CH 200V 120A TO-264AAInput Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
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IXFK120N20 | Виробник : IXYS |
MOSFETs 200V 120A |
товару немає в наявності |


