Технічний опис IXFK80N15Q
Description: MOSFET N-CH 150V 80A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції IXFK80N15Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IXFK80N15Q | IXYS |
Description: MOSFET N-CH 150V 80A TO264AA Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 4V @ 4mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
|
IXFK80N15Q | IXYS |
MOSFETs 80 Amps 150V 0.0225 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFK80N15Q |
Виробник: IXYS
Description: MOSFET N-CH 150V 80A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 150V 80A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXFK80N15Q |
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Виробник: IXYS
MOSFETs 80 Amps 150V 0.0225 Rds
MOSFETs 80 Amps 150V 0.0225 Rds
товару немає в наявності
В кошику
од. на суму грн.




