IXFN64N50PD2
Виробник:
SOT-227B, N-Ch, Id=52A, Vdss=500V Транзистори
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Технічний опис IXFN64N50PD2
Description: MOSFET N-CH 500V 52A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції IXFN64N50PD2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFN64N50PD2 | IXYS |
Description: MOSFET N-CH 500V 52A SOT-227B Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFN64N50PD2 | IXYS |
 Discrete Semiconductor Modules 64 Amps 500V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFN64N50PD2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 52A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 500V 52A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXFN64N50PD2 |
|
Виробник: IXYS
Discrete Semiconductor Modules 64 Amps 500V
Discrete Semiconductor Modules 64 Amps 500V
товару немає в наявності
В кошику
од. на суму грн.