IXFT20N80P
Виробник:
MOSFET 800V 20A 520 mOhm TO-268 Транзистори
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Технічний опис IXFT20N80P
Description: MOSFET N-CH 800V 20A TO268, Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 4mA.
Інші пропозиції IXFT20N80P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFT20N80P | IXYS |
Description: MOSFET N-CH 800V 20A TO268 Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 5V @ 4mA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFT20N80P | IXYS |
 MOSFETs 20 Amps 800V 0.52 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFT20N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268 Case: TO268 Drain current: 20A Power dissipation: 500W Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: tube Polarisation: unipolar Gate charge: 86nC On-state resistance: 0.52Ω |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFT20N80P |
Виробник: IXYS
Description: MOSFET N-CH 800V 20A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Description: MOSFET N-CH 800V 20A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
товару немає в наявності
В кошику
од. на суму грн.
| IXFT20N80P |
|
Виробник: IXYS
MOSFETs 20 Amps 800V 0.52 Rds
MOSFETs 20 Amps 800V 0.52 Rds
товару немає в наявності
В кошику
од. на суму грн.
| IXFT20N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
товару немає в наявності
В кошику
од. на суму грн.