Технічний опис IXFT20N80Q
Description: MOSFET N-CH 800V 20A TO268, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Інші пропозиції IXFT20N80Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFT20N80Q | IXYS |
 Description: MOSFET N-CH 800V 20A TO268Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFT20N80Q |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 20A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 800V 20A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.