Технічний опис IXFX34N80
Description: MOSFET N-CH 800V 34A PLUS247, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 560W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Інші пропозиції IXFX34N80
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFX34N80 | IXYS |
 Description: MOSFET N-CH 800V 34A PLUS247Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFX34N80 | IXYS |
MOSFETs 800V 34A |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFX34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFX34N80 |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 34A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 800V 34A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXFX34N80 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.