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IXGR24N120C3D1

IXGR24N120C3D1 Littelfuse


ittelfuse_discrete_igbts_pt_ixgr24n120c3d1_datasheet.pdf.pdf Виробник: Littelfuse
Trans IGBT Chip N-CH 1200V 48A 200000mW 3-Pin(3+Tab) ISOPLUS 247
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Технічний опис IXGR24N120C3D1 Littelfuse

Description: IGBT 1200V 48A 200W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 220 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/93ns, Switching Energy: 1.37mJ (on), 470µJ (off), Test Condition: 600V, 20A, 5Ohm, 15V, Gate Charge: 79 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 200 W.

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IXGR24N120C3D1 IXGR24N120C3D1 Виробник : IXYS IXGR24N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGR24N120C3D1 IXGR24N120C3D1 Виробник : IXYS littelfuse_discrete_igbts_pt_ixgr24n120c3d1_datasheet.pdf.pdf Description: IGBT 1200V 48A 200W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.37mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 200 W
товар відсутній
IXGR24N120C3D1 IXGR24N120C3D1 Виробник : IXYS media-3318976.pdf IGBT Transistors 48 Amps 1200V 2.75 Rds
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IXGR24N120C3D1 IXGR24N120C3D1 Виробник : IXYS IXGR24N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
товар відсутній