Технічний опис IXGR24N120C3D1 Littelfuse
Description: IGBT PT 1200V 48A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 220 ns, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 16ns/93ns, Switching Energy: 1.37mJ (on), 470µJ (off), Test Condition: 600V, 20A, 5Ohm, 15V, Gate Charge: 79 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 200 W.
Інші пропозиції IXGR24N120C3D1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXGR24N120C3D1 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 54ns Turn-off time: 430ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXGR24N120C3D1 | Виробник : IXYS |
Description: IGBT PT 1200V 48A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 220 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.37mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 200 W |
товару немає в наявності |
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![]() |
IXGR24N120C3D1 | Виробник : IXYS |
![]() |
товару немає в наявності |
|
![]() |
IXGR24N120C3D1 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 54ns Turn-off time: 430ns |
товару немає в наявності |