IXKH47N60C
Виробник:
(альтернатива SPW47N60C3) Транзистори
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Технічний опис IXKH47N60C
Description: MOSFET N-CH 600V 47A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V.
Інші пропозиції IXKH47N60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXKH47N60C | IXYS |
Description: MOSFET N-CH 600V 47A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXKH47N60C | IXYS |
MOSFETs 47 Amps 600V 70 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXKH47N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 250nC Features of semiconductor devices: super junction coolmos |
товару немає в наявності |
В кошику од. на суму грн. |
| IXKH47N60C |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
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од. на суму грн.
| IXKH47N60C |
|
Виробник: IXYS
MOSFETs 47 Amps 600V 70 Rds
MOSFETs 47 Amps 600V 70 Rds
товару немає в наявності
В кошику
од. на суму грн.
| IXKH47N60C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику
од. на суму грн.