IXTA130N10T-TRL IXYS
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис IXTA130N10T-TRL IXYS
Description: MOSFET N-CH 100V 130A TO263, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції IXTA130N10T-TRL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTA130N10T-TRL | IXYS |
MOSFETs IXTA130N10T TRL |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA130N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA130N10T-TRL |
|
Виробник: IXYS
MOSFETs IXTA130N10T TRL
MOSFETs IXTA130N10T TRL
товару немає в наявності
В кошику
од. на суму грн.
| IXTA130N10T-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
товару немає в наявності
В кошику
од. на суму грн.