Технічний опис IXTK20N150 Littelfuse
Description: MOSFET N-CH 1500V 20A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V.
Інші пропозиції IXTK20N150
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IXTK20N150 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 1500V 20A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V |
товару немає в наявності |
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IXTK20N150 | Виробник : IXYS |
 MOSFETs 1200V High Voltage Power MOSFET |
товару немає в наявності |
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IXTK20N150 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us Case: TO264 Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 215nC Reverse recovery time: 1.1µs On-state resistance: 1Ω Drain current: 20A Power dissipation: 1.25kW Drain-source voltage: 1.5kV Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |